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| SPECIFICATION Device Name Type Name Spec. No. : : : IGBT Module 4MBI200T-060 MS5F 05498 Fuji Electric Co.,Ltd. Matsumoto Factory Jun 16 `03 K.Muramatsu Jun 17 `03 T.Miyasaka T.Fujihira K.Yamada MS5F 05498 1 14 H04-004-07 Revised Records Date Classification Ind. Content Applied date Issued date Drawn Checked T.Miyasaka K.Yamada Approved Jun.-17-'03 enactment T.Fujihira MS5F 05498 2 14 H04-004-06 4MBI200T-060 1. Outline Drawing ( Unit : mm ) ( ) shows reference dimension. 2. Equivalent circuit [Inverter] 21,22 13 14 U 5,6 17 18 V 2,3 [Thermistor] 8 9 15 16 19 20 1,24 MS5F 05498 3 14 H04-004-03 3. Absolute Maximum Ratings ( at Tc= 25 unless otherwise specified Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Ic Ic pulse IF IF pulse Collector Power Dissipation Junction temperature Storage temperature Isolation voltage(*1) Pc Tj Tstg Viso (*2) Conditions Ic=1mA Duty=100 % 1ms Duty=50 % 1ms 1 device Maximum Ratings 600 20 200 400 200 400 540 150 -40~ +125 Units V V A W V Nm AC : 1min. 2500 3.5 Mounting Screw Torque (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 N m (M5) 4. Electrical characteristics ( at Tj= 25 unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Symbols ICES IGES VGE = VCE = Conditions 0 V, 0 V, 20 V, VCE = VGE = Ic = 600 V 20 V 200 mA Tj = 25 15 V 200 A 0V 10 V 1 MHz 300 V 200 A 15 V 16 Tj = 25 200 A Tj = 125 Tj = 25 Tj = 125 IF = 200 A Tj = 125 Tj = 25 Tj = 125 VGE = Characteristics min. 6.2 100 465 3305 typ. 6.7 2.4 2.6 1.9 2.1 15000 2600 2250 0.35 0.2 0.1 0.5 0.05 2.3 2.2 1.8 1.7 5000 495 3375 Max. 1.0 200 7.7 2.8 1.2 0.6 1.2 0.45 2.7 0.35 520 3450 Units mA nA V VGE(th) VCE = VCE(sat) (Terminal) VGE = VCE(sat) Ic = (Chip) V Cies Coes Cres ton tr tr(i) toff tf VF VCE = f= Vcc = Ic = VGE = RG = pF Inverter s Forward on voltage (Terminal) IF = VF (Chip) V Reverse recovery time Allowable avalance energy during short curcuit cuting off (Non-repetitive) Thermisitor trr PAV R B s mJ Ic > 400A, Tj = 125 T = 25 T = 100 T = 25/50 Resistance B value K 5. Thermal resistance characteristics Items Thermal resistance (1 device) Contact Thermal resistance (1 device) Symbols Rth(j-c) Rth(c-f) IGBT FWD Conditions Characteristics min. typ. 0.05 Units Max. 0.23 0.44 / - With thermal compound * * This is the value which is defined mounting on the additional cooling fin with thermal compound. MS5F 05498 4 14 H04-004-03 6. Indication on module 4MBI200T-060 200A 600V Lot No. Place of manufucturing 7. Applicable category This specification is applied to IGBT Module named 4MBI200T-060. 8. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when tranporting. 9. Definitions of switching time 90% 0V L 0V V GE trr Irr 90% VCE Vcc Ic 90% RG V GE VCE Ic 0V 0A tr(i) tr ton toff Ic 10% 10% VCE tf 10% MS5F 05498 5 14 H04-004-03 10. Definition of the allowable avalance energy during short circuit cutfing off. -VCEP 1 2 PAV= IC -ICP xVCEPxICPxtf(SC) VCE tf(SC) 11. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No. - Products quantity in a packing box MS5F 05498 6 14 H04-004-03 12. Reliability test results Reliability Test Items Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration Test methods and conditions Pull force : 20N Test time : 101 sec. Screw torque : 2.5 ~ 3.5 Nm (M5) Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 200m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solder temp. : 2355 Immersion time : 50.5sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Solder temp. : 2605 Immersion time : 101sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Atmospheric pressure : 1.7 x 105 Pa Test humidity : 855% Test duration : 96hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100 +0 -5 Reference AcceptNumber norms ance EIAJ ED-4701 of sample number (Aug.-2001 edition) Test Method 401 Method Test Method 402 method Test Method 403 Reference 1 Condition code B 5 5 5 (0:1) (0:1) (0:1) Mechanical Tests 4 Shock Test Method 404 Condition code B 5 (0:1) 5 Solderabitlity Test Method 303 Condition code A 5 (0:1) 6 Resistance to Soldering Heat Test Method 302 Condition code A 5 (0:1) 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E 5 5 5 (0:1) (0:1) (0:1) 5 (0:1) Environment Tests 5 Temperature Cycle Test Method 105 5 (0:1) Dwell time Number of cycles 6 Thermal Shock Test temp. Test Method 307 5 (0:1) method Condition code A Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles +5 -0 MS5F 05498 7 14 H04-004-03 Reliability Test Items Test categories Test items 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1) (Aug.-2001 edition) Test Method 101 Endurance Tests Tests Endurance Test duration 2 High temperature Test temp. Bias (for gate) Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles : Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test Method 101 5 (0:1) : Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles Test Method 102 Condition code C 5 (0:1) 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 106 5 (0:1) Failu r e Cr iter ia Item Elec tric al c harac teris tic C haracteris tic Leakage current Gate thres hold voltage Saturation voltage Forward voltage Therm al IGBT res is tance FW D Isolation voltage Vis ual inspection Vis ual inspection Peeling Plating and the others LSL : Low er specified lim it. USL : Upper s pec ified lim it. Note : Eac h param eter m eas urem ent read-outs s hall be m ade after s tabiliz ing the c om ponents at room am bient for 2 hours m inim um , 24 hours m axim um after rem oval from the tes ts . And in c as e of the wetting tes ts , for exam ple, m ois ture resis tance tes ts, eac h c om ponent s hall be m ade w ipe or dry com pletely before the m easurem ent. The vis ual s am ple or Sym bol ICES IGES VGE(th) VCE(s at) VF VGE VC E VF Viso USLx1.2 mV Broken ins ulation Failure c riteria Lower lim it Upper lim it LSLx0.8 USLx 2 USLx 2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 Unit mA A mA V V mV Note MS5F 05498 8 14 H04-004-03 Reliability Test Results Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code B Test Method 303 Condition code A Test Method 302 Condition code A Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A Test items Mechanical Tests 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 5 5 5 5 5 5 5 5 5 5 5 5 0 0 0 0 0 0 0 0 0 0 0 0 Environment Tests 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle 6 Thermal Shock Endurance Tests Endurance Tests 1 High temperature Reverse Bias Test Method 101 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT ) Test Method 101 Test Method 102 Condition code C Test Method 106 5 5 5 5 0 0 0 0 MS5F 05498 9 14 H04-004-03 500 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 500 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 400 VGE= 20V 15V 12V 400 VGE= 20V 15V 12V Collector current : Ic [ A ] Collector current : Ic [ A ] 300 10V 300 10V 200 200 100 100 8V 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] 500 [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 12 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) Collector - Emitter voltage : VCE [ V ] 400 Tj= 25C Tj= 125C 10 Collector current : Ic [ A ] 8 300 6 200 4 100 Ic=400A 2 Ic=200A Ic=100A 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] 50000 [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=200A, Tj= 25C 500 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 400 20 Cies 10000 300 15 5000 200 10 100 5 1000 Coes Cres 500 0 5 10 15 20 25 30 35 0 0 100 200 300 400 500 600 700 800 0 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] MS5F 05498 10 14 H04-004-03 Gate - Emitter voltage : VGE [ V ] 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=16ohm, Tj= 25C 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg= 16ohm, Tj= 125C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff ton tr toff ton tr 100 100 tf tf 10 0 100 200 300 400 10 0 100 200 300 400 Collector current : Ic [ A ] Collector current : Ic [ A ] 1000 [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=+-15V, Tj= 25C toff ton 15 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=16ohm Eon(125C) Switching time : ton, tr, toff, tf [ nsec ] tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eoff(125C) 10 Eoff(25C) Eon(25C) 100 tf 5 Err(125C) Err(25C) 0 10 1 10 100 0 200 400 Gate resistance : Rg [ ohm ] Collector current : Ic [ A ] 60 [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=+-15V, Tj= 125C 600 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=16ohm, Tj<=125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 50 Eon 500 40 Collector current : Ic [ A ] 300 400 30 300 20 200 Eoff 10 100 0 5 10 100 Err 0 0 200 400 600 800 Gate resistance : Rg [ ohm ] Collector - Emitter voltage : VCE [ V ] MS5F 05498 11 14 H04-004-03 [ Inverter ] Forward current vs. Forward on voltage (typ.) 500 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=+-15V, Rg=16ohm 400 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr(125C) trr(25C) 100 Forward current : IF [ A ] 300 Tj=125C Tj=25C Irr(125C) Irr(25C) 200 100 0 0 1 2 3 4 30 0 100 200 300 400 Forward on voltage : VF [ V ] Forward current : IF [ A ] Transient thermal resistance (max.) 1 200 100 [ Thermistor ] Temperature characteristic (typ.) FWD Thermal resistanse : Rth(j-c) [ C/W ] IGBT Resistance : R [ k ] 10 0.1 1 0.01 0.001 0.01 0.1 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [ C ] MS5F 05498 12 14 H04-004-03 Warnings This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. Use this product within the power cycle curve (Technical Rep.No. : MT6M4057) (No.: MT6M4057) Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a critical accident. 100mm100um10um It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOA RBSOA If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE -VGE : -VGE = -15V) In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - MS5F 05498 13 14 H04-004-03 Cautions - Fuji Electric is constantly making every endeavor to improve the product quality and reliability.However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd. MS5F 05498 14 14 H04-004-03 |
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